The Gaussian doping is used to optimize the performance of InP/InGaAs uni-traveling-carrier photodiode (UTC-PD) in this ......

A back-illuminated mesa-structure InGaAs/InP charge-compensated uni-traveling-carrier (UTC) photodiode (PD) is fabricate......

The fabrication and characterization of p-i-n photodiodes integrated with wide spectrum focusing reflectors using nonper......

We use the selective area growth (SAG) technique to monolithically integrate InP-based 4-channel arrayed waveguide grati......

Dark-current-voltage curves and photon-current-voltage curves were measured by a passive quenched circuit so that the vo......